Goleta, Calif., United States:
Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and a world provider of excessive reliability, excessive efficiency gallium nitride (GaN) energy conversion merchandise—introduced as we speak that it has been awarded a contract by the Advanced Research Projects Agency-Energy (ARPA-E). Part of the ARPA-E CIRCUITS program and by a sub-contract from Illinois Institute of Technology, the challenge covers the availability of GaN-based four-quadrant switches (FQSes) for use in varied energy conversion purposes together with novel ones like present supply inverters, cyclo-converters for drives and microinverters, matrix switching, and solid-state circuit breakers. The initiative is the results of Transphorm’s deep GaN engineering experience (particularly its bidirectional GaN) alongside with trade and college curiosity in additional exploring the probabilities of lateral GaN switches.
Transphorm will prototype the FQS platform utilizing its 650 V GaN expertise that continues to supply the trade’s highest threshold voltage (4 V) in a 4-pin TO-247 bundle. The challenge is predicted to be accomplished in lower than a yr.
The Importance of True Bidirectional GaN Switch Innovation
Transphorm’s customary lateral GaN FETs inherently present bidirectional present movement. However, sure purposes corresponding to present supply inverters for motor drives, cyclo-converters and matrix converters additionally require bidirectional voltage management to successfully handle energy movement. This functionality is historically achieved by inserting two FETs in collection utilizing the units’ physique diode to steer and management present movement or through two IGBTs and two diodes, thus requiring 4 units.
Also referred to as a real bidirectional swap, the FQS replaces the 2 FET or the 2 IGBT+two diode approaches with a single system able to realizing bidirectional voltage management and bidirectional present movement. The FQS makes use of two gates to dam voltage of both polarity or move present in both route. And, as a single system, it reduces elements required to realize the specified outcome thereby enabling larger energy density, elevated reliability, and total system price discount.
“It is exciting to see the day approaching when GaN-based bidirectional switches will be ready for commercial production,” says Emeritus Professor Tom Jahns, FIEEE, NAE, on the University of Wisconsin – Madison. “Power electronics engineers have been anxiously anticipating the day when MOS-gated bidirectional switches will become available because they are the key to implementing promising power converter topologies that offer exciting opportunities for improving efficiency, power density, and fault tolerance in many applications. They hold the potential to dramatically improve the commercial viability of new products including solid-state circuit breakers and integrated motor drives by making them significantly more compact and efficient than what is achievable using today’s silicon-based switches.”
“GaN adoption is at a point today when bringing an FQS bidirectional device to market makes sense,” mentioned Dr. Rakesh Lal, Technical Fellow at Transphorm. “Lateral GaN technology enables compact FQS dies to be fabricated because the voltage blocking region can be shared. This configuration cannot be realized with vertical power device technologies, such as with silicon or silicon carbide, which gives GaN FQSes a clear edge in performance and cost. With our FQS, one gets true bidirectionality in a fast low-loss switch, which we believe will inspire next generation power conversion products through the CIRCUITS program driven partnerships.”
About Transphorm
Transphorm, Inc., a world chief within the GaN revolution, designs and manufactures excessive efficiency and excessive reliability GaN semiconductors for excessive voltage energy conversion purposes. Having one of many largest Power GaN IP portfolios of greater than 1,000 owned or licensed patents, Transphorm produces the trade’s first JEDEC and AEC-Q101 certified excessive voltage GaN semiconductor units. The Company’s vertically built-in system business mannequin permits for innovation at each growth stage: design, fabrication, system, and utility help. Transphorm’s improvements are shifting energy electronics past the restrictions of silicon to realize over 99% effectivity, 40% extra energy density and 20% decrease system price. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan. For extra data, please go to www.transphormusa.com. Follow us on Twitter @transphormusa and WeChat @ Transphorm_GaN.
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