Kawasaki, Japan:
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched new energy units, the “TWxxNxxxC series,” its 3rd technology silicon carbide(SiC) MOSFETs[1][2] that ship low on-resistance and considerably decreased switching loss. Ten merchandise, 5 1200V and 5 650V merchandise, have began transport in the present day.
This press launch options multimedia. View the full launch right here: https://www.businesswire.com/news/home/20220829005265/en/
Toshiba: 3rd technology SiC MOSFETs “TWxxxNxxxC Series” (Graphic: Business Wire)
The new merchandise scale back on-resistance per unit space (RDS(ON)A) by about 43%[3], permitting the drain-source on-resistance * gate-drain cost (RDS(ON)*Qgd), an essential index that represents the relationship between conduction loss and switching loss, to be lowered by about 80%[4]. This cuts the switching loss by about 20%[5], and lowers each on-resistance and switching loss. The new merchandise contribute to greater tools effectivity.
Toshiba will proceed to increase its lineup of energy units and to improve its manufacturing services, and goals to notice a carbon-free economy by offering high-performance energy units that are straightforward to use.
Notes:
[1] Toshiba has developed a tool construction that reduces on-resistance per unit space (RDS(ON)A) by utilizing a construction with built-in schottky barrier diode developed for the 2nd technology SiC MOSFETs, and likewise reduces suggestions capacitance in the JFET area.
[2] MOSFET: metal-oxide-semiconductor field-effect transistor
[3] Comparison of the new 1200V SiC MOSFETs when RDS(ON)A is ready to 1 in the 2nd technology SiC MOSFETs. Toshiba survey.
[4] Comparison of the new 1200V SiC MOSFETs when RDS(ON)*Qgd is ready to 1 in the 2nd technology SiC MOSFETs. Toshiba survey.
[5] Comparison of the new 1200V SiC MOSFETs and the 2nd technology SiC MOSFETs. Toshiba survey.
Applications
・Switching energy provides (servers, information heart, communications tools, and so on.)
・EV charging stations
・Photovoltaic inverters
・Uninterruptible energy provides (UPS)
Features
・Low on-resistance per unit space (RDS(ON)A)
・Low drain-source on-resistance * gate-drain cost (RDS(ON)*Qgd)
・Low diode ahead voltage: VDSF= -1.35V (typ.) @VGS= -5V
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Main Specifications
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(@Ta=25°C until in any other case specified)
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Part quantity
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Package
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Absolute most rankings
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Electrical traits
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Sample
Check
&
Availability
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Drain-
supply
voltage
VDSS
(V)
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Gate-
supply
voltage
VGSS
(V)
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Drain
present
(DC)
ID
(A)
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Drain-
supply
On-
resistance
RDS(ON)
typ.
(mΩ)
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Gate
threshold
voltage
Vth
(V)
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Total
gate
cost
Qg
typ.
(nC)
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Gate-
drain
cost
Qgd
typ.
(nC)
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Input
capacitance
Ciss
typ.
(pF)
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Diode
ahead
voltage
VDSF
typ.
(V)
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@Tc=25°C
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@VGS=18V
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@VDS=10V
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@VDS=400V,
f=100kHz
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@VGS= -5V
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TW015N120C
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TO-247
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1200
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-10 to 25
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100
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15
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3.0 to 5.0
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158
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23
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6000
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-1.35
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Buy Online
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TW030N120C
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60
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30
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82
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13
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2925
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Buy Online
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|||||
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TW045N120C
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40
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45
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57
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8.9
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1969
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Buy Online
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|||||
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TW060N120C
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36
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60
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46
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7.8
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1530
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Buy Online
|
|||||
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TW140N120C
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20
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140
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24
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4.2
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691
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Buy Online
|
|||||
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TW015N65C
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650
|
100
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15
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128
|
19
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4850
|
Buy Online
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||||
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TW027N65C
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58
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27
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65
|
10
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2288
|
Buy Online
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|||||
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TW048N65C
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40
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48
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41
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6.2
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1362
|
Buy Online
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|||||
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TW083N65C
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30
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83
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28
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3.9
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873
|
Buy Online
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|||||
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TW107N65C
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20
|
107
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21
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2.3
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600
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Buy Online
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Follow the hyperlinks under for extra on the new merchandise.
1200 Products
TW015N120C
TW030N120C
TW045N120C
TW060N120C
TW140N120C
650 Products
TW015N65C
TW027N65C
TW048N65C
TW083N65C
TW107N65C
Follow the hyperlinks under for extra on Toshiba SiC MOSFETs.
SiC Power Devices
SiC MOSFETs
To test availability of the new merchandise at on-line distributors, go to:
1200 Products
TW015N120C
Buy Online
TW030N120C
Buy Online
TW045N120C
Buy Online
TW060N120C
Buy Online
TW140N120C
Buy Online
650V Products
TW015N65C
Buy Online
TW027N65C
Buy Online
TW048N65C
Buy Online
TW083N65C
Buy Online
TW107N65C
Buy Online
* Company names, product names, and repair names could also be logos of their respective corporations.
* Information on this doc, together with product costs and specs, content material of companies and phone info, is present on the date of the announcement however is topic to change with out prior discover.
About Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation, a number one provider of superior semiconductor and storage options, attracts on over half a century of expertise and innovation to provide prospects and business companions excellent discrete semiconductors, system LSIs and HDD merchandise.
The firm’s 23,000 staff round the world share a dedication to maximize product worth, and promote shut collaboration with prospects in the co-creation of worth and new markets. With annual gross sales now surpassing 850-billion yen (US$7.5 billion), Toshiba Electronic Devices & Storage Corporation appears ahead to constructing and to contributing to a greater future for individuals in every single place.
Find out extra at https://toshiba.semicon-storage.com/ap-en/top.html
View supply model on businesswire.com: https://www.businesswire.com/news/home/20220829005265/en/
